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| BCP69 PNP General Purpose Amplifier January 2007 BCP69 PNP General Purpose Amplifier 4 * This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0A. * Sourced from Process 77. 1 3 2 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* T =25C unless otherwise noted a Symbol VCEO VCBO VEBO IC TJ TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature Range - Continuous Value -20 -30 -5.0 -1.5 150 - 55 ~ +150 Units V V V A C C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics* T =25C unless otherwise noted a Symbol PD RJA Parameter Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Value 1.0 8.0 125 Units W mW/C C/W * Device mounted on FR-4 PCB 36mm x 18mm x 1.5mm; mounting pad for the collector lead min. 6cm2 Electrical Characteristics* Symbol BVCEO BVCBO BVEBO ICBO IEBO hFE Ta = 25C unless otherwise noted Parameter Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current DC Current Gain Test Conditions IC = -10mA, IB = 0 IC = -1.0mA, IE = 0 IE = -100A, IC = 0 VCB = -25V, IE = 0 VCB = -25V, IE = 0, Tj = 150oC VEB = -5.0V, IC = 0 IC = -5mA, VCE = -1.0V IC = -500mA, VCE = -1.0V IC = -1.0A, VCE = -1.0V IC = -1.0A, IB = -100mA IC = -1.0A, VCE = -1.0V VCB = -10V, IE = 0, f = 1.0MHz IC = -50mA, VCE = -10V, f = 20MHz Min. -20 -30 -5.0 Typ. Max. Units V V V -100 -10 -100 50 85 60 375 -0.5 -1.0 30 2.5 nA uA nA VCE(sat) VBE(on) Ccb hfe Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector-Base Capacitance Small-Signal Current Gain V V pF * Pulse Test: Pulse Width 300s, Duty Cycle 2.0% (c)2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com BCP69 Rev. B BCP69 PNP General Purpose Amplifier Typical Performance Characteristics V CESAT- COLLE CTOR-EMITTER VOLTAGE (V) h FE- TYP ICAL PULSED CURRE NT GAIN Typical Pulsed Current Gain vs Collector Current 300 Collector-Emitter Saturation Voltage vs Collector Current 1 = 10 V CE = 5.0V 250 200 150 100 - 40 C 125 C 0.8 0.6 0.4 0.2 0 0.01 - 40 C 125 C 25 C 25 C 50 0 0.01 IC 0.1 1 - COLLECTOR CURRENT (A) 2 0.1 1 I C - COLLE CTOR CURRENT (A) 3 V BE(O N)- BASE-E MITTER ON VOLTAGE (V) V BESAT - BASE-EMITTER VOLTAG E (V) Base-Emitter Saturation Voltage vs Collector Current 1 = 10 Base-Emitter ON Voltage vs Collector Current 1 0.8 - 40 C 25 C 0.8 - 40 C 25 C 0.6 0.6 125 C 125 C 0.4 VCE = 5.0 V 0.4 1 IC 10 100 - COLLECTOR CURRENT ( mA) 1000 0.2 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 COBO- COLLECTOR-BASE CAPACITANCE (pF) Collector-Cutoff Current vs Ambient Temperature I CBO - COLLECTOR CURRENT (nA) 100 V CB = 2 0V Collector-Base Capacitance vs Collector-Base Voltage 40 f = 1.0 MHz 10 30 1 20 0.1 10 25 50 75 100 125 T A - AM BIENT TE MPE RATURE (C) 150 0 0 10 20 V CB- COLLECTOR-BASE VOLTAGE (V) 30 2 BCP69 Rev. B www.fairchildsemi.com BCP69 PNP General Purpose Amplifier Typical Performance Characteristics Gain Bandwidth Product vs Collector Current 250 V CE = 10V 700 1 .5 f T - GAIN BANDWIDTH PRODUCT (MHz) Power Dissipation vs Ambient Temperature PC[W], POWER DISSIPATION P - POWER DISSIPATION (mW) 600 500 1 .0 400 300 0 .5 200 TO-92 200 150 100 50 0 D 100 0 .0 0 0 0 25 25 50 50 75 75 100 100 125 125 150 150 1 IC 10 100 - COLLECTOR CURRENT (mA) 1000 T a [ C ], A M B IE A T T E(M P E R A T U R E TEMPER N TURE oC) o 3 BCP69 Rev. B www.fairchildsemi.com BCP69 PNP General Purpose Amplifier Mechanical Dimensions SOT-223 0.08MAX 3.00 0.10 MAX1.80 1.75 0.20 3.50 0.20 (0.60) 0.65 0.20 +0.04 0.06 -0.02 2.30 TYP (0.95) 4.60 0.25 0.70 0.10 (0.95) +0.10 0.25 -0.05 (0.60) 0~ 10 1.60 0.20 (0.46) (0.89) 6.50 0.20 7.00 0.30 Dimensions in Millimeters 4 BCP69 Rev. B www.fairchildsemi.com BCP69 PNP General Purpose Amplifier BCP69 PNP General Purpose Amplifier FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 5 BCP69 Rev. B www.fairchildsemi.com |
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